Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.
نویسندگان
چکیده
Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.
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ورودعنوان ژورنال:
- Nano letters
دوره 5 8 شماره
صفحات -
تاریخ انتشار 2005